10瓦级双包层光纤激光器

考虑到所用大功率激光二极管的光谱特性，对光纤激光器的基本法布里-珀罗腔型稍加改变，研制出激光二极管抽运的10w级双包层光纤激光器，获得最高功率为11．8w、波长1100mm的单模激光输出。     

Precise measurement of hyperfine structure in the state of Rb

We demonstrate a technique to measure hyperfine structure using a frequency-stabilized diode laser and an acousto-optic modulator locked to the frequency difference between two hyperfine peaks. We use this technique to measure hyperfine intervals in the 5 P _3/2 state of ⁸⁵Rb and obtain a precision of 20 kHz. We extract values for the magnetic-dipole coupling constant A = 25.038(5) MHz and the electric-quadrupole coupling constant B = 26.011(22) MHz. These values are a significant improvement over previous results. Received 6 March 2003 Published online 15 April 2003     

多棒串接固体激光器谐振腔的研究

运用矩阵光学的方法对多棒串接固体激光器的谐振腔参数及其在平平腔时的热稳条件进行了研究，并计算了六棒串接平平腔固体激光器的稳定区.结果证明：多棒串接固体激光器的稳定区和非稳区相互间隔，在平平腔总腔长、激光棒数量n和棒间距L一定的条件下，当采用对称结构时(L₁=L₂)，则谐振腔的每段稳定区均达到最大；且只要 平平腔满足L₁=L₂=L/2以及热焦距f在大于某个下限值f_m时，稳定性条件01< 关键词： 多棒串接固体激光器 稳定区 热稳条件     

类锂铝复合机制产生X光激光的等离子体状态

本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。     

电子束装置运行稳定性的测量

 为了验证电子束装置的稳定性,分别对电流波形、电压波形进行了多次测量,对二极管放电时注入腔中电子均匀性进行了探测,最后改变二极管真空度测量了泵浦氩的荧光 谱的稳定性。     

自集成透镜InGaAsP／InPDHLED及其离子束铣技术

本文报道在国内首次采用离子束铣技术研制自集成透镜InGaAsP/InP DH LED的实验结果。采用烘烤正性光致抗蚀剂来形成球状掩膜适合于离子束铣,且重复性很好。为了获得光洁的刻蚀表面,刻蚀条件均已最优化。     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。     

Analysis of Threshold Current and Wall-Plug Efficiency of Diode Lasers with Asymmetric Facet Reflectivity

Threshold current and differential quantum efficiency of broad contact lasers with asymmetric facet reflectivity are discussed with the purpose to reveal factors essential for optimisation of the wall-plug efficiency of such lasers. Lasers with low front facet reflectivity and short cavity often exhibit behaviour difficult to explain with a classical theory. More rigorous calculation performed in this work show that differential quantum efficiency is indeed less affected by a change of the front facet reflectivity or cavity length than predicted by such theory. These findings greatly simplify criteria for optimisation of the wall-plug efficiency of broad contact lasers with coated facets.     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

The role of OH ions in the stabilization of F colour centres in LiF

Thermally Stimulated Depolarisation Current (TSDC) and optical methods are applied to a range of alkali-fluoride crystals in order to establish a model for the stable F ₂ ⁺ - like colour centres in LiF:OH^-. The experimental results for LiF:OH^- suggest that the OH^- defects are partially destroyed under ionising irradiation or during crystal growth. The low-temperature dielectric relaxation signals in LiF:OH^- and LiF:Mg²⁺,OH^- are attributed to highly interacting hydroxide ions and products of their destruction located in extended lattice defects. In LiF:OH^-, in contrast to other alkali halides, the results advocate for a defect-structure model, which considers a neutral defect (ND, probably O₂ or H₂) sited at the anion vacancy of the O^2--V _a ⁺ dipole and which possibly is the “nucleus” for the F ₂ ⁺ centre. The proposed F ₂ ⁺ (ND, O^-) model seems to better explain the dielectric results, compared to the older F ₂ ⁺ (O^2-) and F ₂ ⁺ (O^-) models. The estimate for the electric dipole moment derived from the experimental TSDC bands, gives a value for the F ₂ ⁺ - like centre in LiF:OH^- between those of the F ₂ ⁺ (O^-) and F ₂ ⁺ (O^2-) defects, in good agreement with the proposed F ₂ ⁺ (ND,O^-) model. The reduction of the activation energy barrier of the (re)orientation process of the Mg²⁺V _c ^- (OH^-) complexes in LiF:Mg²⁺,OH^-, and the low-temperature shift of their TSDC band, compared to the single Mg ₂ ⁺ V _c ^- peak in LiF:Mg²⁺, are tentatively ascribed to an increase in the crystal-lattice parameters owing to the presence of OH^- and/or products of its destruction. Received 31 August 2001 / Received in final form 30 March 2002 Published online 9 July 2002